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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1126
DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) *High DC Current Gain : hFE= 1000(Min) @IC= 5A *Low Saturation Voltage
APPLICATIONS *Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
w w
scs .i w
VALUE 120 V 120 V 7 V 10 A 15 A
UNIT
.cn mi e
IC
Collector Current-Continuous
ICP
Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature
PC
50
W
TJ
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 25mA; RBE= MIN TYP.
2SD1126
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
120
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 5A; IB= 10mA
B
1.5
V
VCE(sat)-2 VBE(sat)-1
Collector-Emitter Saturation Voltage
IC= 10A; IB= 0.1A IC= 5A; IB= 10mA
B
3.0
V
Base-Emitter Saturation Voltage
2.0
V
VBE(sat)-2 ICBO
Base-Emitter Saturation Voltage
IC= 10A; IB= 0.1A
Collector Cutoff Current
ICEO
Collector Cutoff Current
hFE
DC Current Gain
VECF
C-E Diode Forward Voltage
Switching times
w
ww
scs .i
IF= 10A
VCB= 120V; IE=0
VCE= 100V; RBE=
IC= 5A; VCE= 3V
.cn mi e
1000 0.8 8.0
3.5
V A A
100
10
20000
3.0
V
ton toff
Turn-on Time IC= 5A, IB1= -IB2= 10mA Turn-Off Time
s s
isc Websitewww.iscsemi.cn
2


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